diagram as a useful method of investigating the interfacial layer effects in schottky barrier solar cells: The example of Cu/Cu2O photovoltaic junctions
- 1 August 1986
- journal article
- Published by Elsevier in Solar Cells
- Vol. 18 (2), 129-137
- https://doi.org/10.1016/0379-6787(86)90031-1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Enhancement of the photovoltaic conversion efficiency in Cu/Cu2O schottky barrier solar cells by H+ ion irradiationPhysica Status Solidi (a), 1986
- Cu/Cu2O Schottky barrier solar cells prepared by multistep irradiation of a Cu2O substrate by H+ ionsSolar Cells, 1985
- Some Rationale for the Unusual Behavior of the Dielectric Constant of Cu2OCanadian Journal of Physics, 1973
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971