Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 μm grown by low-pressure metalorganic chemical vapour deposition

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Abstract
We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1.23 μm grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.