Source-material dependent growth limitations in unseeded dissociative sublimation of ZnSe
- 1 December 1996
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 31 (23), 6171-6175
- https://doi.org/10.1007/bf00354434
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Selenium precipitation in ZnSe crystals grown by physical vapor transportJournal of Crystal Growth, 1995
- Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue-green laser diodeApplied Physics Letters, 1994
- ZnSe single crystal growth by the method of dissociative sublimationJournal of Crystal Growth, 1994
- Growth and characterization of ZnSe for low temperature calorimetry applicationsJournal of Crystal Growth, 1993
- Blue-green laser diodesApplied Physics Letters, 1991
- Properties of polycrystalline ZnSe thin films grown by ion-beam depositionJournal of Applied Physics, 1990
- Characteristics of ZnSe crystals annealed under host atom atmospheresJournal of Crystal Growth, 1990
- Growth of single crystals of zinc selenide from the vapour phaseJournal of Crystal Growth, 1979
- Self‐diffusion of Zn and Se in ZnSePhysica Status Solidi (b), 1971
- Diffusional limitations in gas phase growth of crystalsJournal of Crystal Growth, 1971