Bound-exciton luminescence associated with cobalt acceptors in vapor-grown GaAs
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7), 4823-4827
- https://doi.org/10.1063/1.326545
Abstract
A new emission line due to a recombination of an exciton bound to a cobalt acceptor has been observed at 1.489 eV in vapor‐grown GaAs. Detailed Zeeman analysis of the emission revealed that the corresponding center has a tetrahedral symmetry in the crystal. Relevant splitting factors are ge=−0.47(electron), K=0.61(hole), and L=−0.05(hole).Keywords
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