Vertical transport in GaAs/Ga1-xAlxAs superlattices observed by photoluminescence
- 30 April 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (1), 75-78
- https://doi.org/10.1016/0038-1098(85)91037-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Localization induced electron-hole transition rate enhancement in GaAs quantum wellsApplied Physics Letters, 1984
- Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wellsJournal of Electronic Materials, 1983
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983
- Two-dimensional electrons-holes droplets in superlatticesSolid State Communications, 1981
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970