High-order twin boundaries in CVD diamond films
- 30 September 1993
- journal article
- Published by Elsevier in Materials Letters
- Vol. 17 (5), 211-216
- https://doi.org/10.1016/0167-577x(93)90001-e
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth defects in diamond filmsJournal of Materials Research, 1993
- Dislocations, twins, and grain boundaries in CVD diamond thin films: Atomic structure and propertiesJournal of Materials Research, 1990
- Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor depositionJournal of Materials Research, 1990
- Electron microscopy of vapor phase deposited diamondJournal of Materials Research, 1990
- Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structuresJournal of Materials Research, 1989
- Surface Morphology And Defect Structures In Microwave CVD Diamond FilmsPublished by SPIE-Intl Soc Optical Eng ,1989
- On epitaxial growth of diamond films on (100) silicon substratesApplied Physics Letters, 1988
- Fine Particles of Silicon. I. Crystal Growth of Spherical Particles of SiJapanese Journal of Applied Physics, 1987
- The structure of second and third order twin boundaries in siliconScripta Metallurgica, 1983
- On the geometry of coincidence-site latticesActa Crystallographica, 1966