Hard conducting implanted diamond layers
- 1 February 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (3), 129-130
- https://doi.org/10.1063/1.89323
Abstract
Hard conducting diamond layers were produced by carbon implantation. Above a threshold implantation dose (≃3×1016/cm2), these layers possess the high conductivity of graphite (≃10−2 Ω−1 cm−1) and a hardness intermediate between that of silicon and diamond.Keywords
This publication has 3 references indexed in Scilit:
- Hopping conductivity in C-implanted amorphous diamond, or how to ruin a perfectly good diamondSolid State Communications, 1976
- Hopping conductivity in amorphous carbon filmsSolid State Communications, 1975
- Electrical conduction in amorphous carbon filmsThin Solid Films, 1971