Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation

Abstract

The bandgap of Ga0.5In0.5P grown by metalorganic vapourphase epitaxy increases as the substrate is inclined away from the (100) plane and saturates at high angles. The same phenomenon also exists in the quaternary (Al0.6Ga0.4)0.5In0.5P.