Effect of temperature gradients on the first-order Raman spectrum of Si

1 January 1984

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 44 (1), 125-127
https://doi.org/10.1063/1.94575

Abstract

We report the results of measurements of the first-order Raman spectrum of Si under conditions of large temperature inhomogeneities generated by a critically focused cw laser beam. We find that the Stokes and anti-Stokes bands are extensively deformed due to large asymmetric broadenings which develop on the side of the low-frequency shifts. The broadenings are thus attributed to temperature gradients and are shown to be important in determining temperature distributions.

Keywords

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