Negative luminescence from mid-wave infrared HgCdTe diode arrays
- 1 January 2004
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 20 (3-4), 558-562
- https://doi.org/10.1016/j.physe.2003.09.009
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- InAs and InAsSb LEDs with built-in cavitiesSemiconductor Science and Technology, 2003
- Micromachined optical concentrators for IR negative luminescent devicesJournal of Modern Optics, 2002
- Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers?IEE Proceedings - Optoelectronics, 2002
- Long-wavelength HgCdTe negative luminescent devicesApplied Physics Letters, 2001
- HgCdTe photodetectors with negative luminescent efficiencies >80%Applied Physics Letters, 2001
- Negative luminescence and its applicationsPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2001
- Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devicesApplied Physics Letters, 1999
- Negative luminescence from type-II InAs/GaSb superlattice photodiodesApplied Physics Letters, 1999
- Applications of negative luminescenceInfrared Physics & Technology, 1997
- Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodesInfrared Physics & Technology, 1995