Photo-Process of Tantalum Oxide Films and Their Characteristics
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4R), 506-511
- https://doi.org/10.1143/jjap.27.506
Abstract
TaO x film formation by a photo-CVD method using TaCl5 as a source material is examined. The deposition rate increases with increasing growth temperature and decreasing chamber pressure down to 1 Torr. The leakage current of the formed TaO x film decreases drastically with annealing in the presence of both UV-irradiation and an oxygen ambient after deposition (p-O2 annealing), when the underlying layer contains Si. The leakage current density is 10-8 A/cm2 at the 4 MV/cm electric field. The dielectric constant for MIS structure capacitors decreases with decreasing TaO x thickness, but does not decrease much with p-O2 annealing. In addition, the mechanisms of reduction of the leakage current with p-O2 annealing are discussed.Keywords
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