Degradation mechanism in 1.3 μm InGaAsP/InP buried crescent laser diode at a high temperature

Abstract

A leakage current flowing through a junction between a p-InP current blocking layer and an n-InP cladding layer is examined in connection with a degradation of a buried crescent laser diode at a high temperature. The degradation characteristics have been successfully explained by a theoretical model proposed in this study.