Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy
- 15 May 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10), 796-798
- https://doi.org/10.1063/1.92167
Abstract
A method to eliminate oval defects from GaAs films grown by molecular beam epitaxy is presented. It appears that gallium oxide in the Ga melt is the major cause for this surface defect. A simple precaution of suppressing oxidation of gallium virtually eliminated oval defects.Keywords
This publication has 1 reference indexed in Scilit:
- Recent developments in molecular beam epitaxy (MBE)Journal of Vacuum Science and Technology, 1979