Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.

Abstract

A simple analytical model of the 3rd-order intermodulation-distortion properties of a GaAs field-effect transistor is proposed. The model takes into account the distortion-producing nonlinearities of the Schottky-bairier junction, the trans-conductance and the drain conductance. Parameters of the model are presented for a GaAs f.e.t. of 0.5 μm gate length, and the model-predicted distortion characteristics are compared with measured data.