A modulation bandwidth of 25 GHz for InP based lasers, using devices with p-doped, strained multiquantum-well active regions is reported. The doping reduces the bandwidth limitations caused by hole transport in standard quantum-well lasers, as well as increasing resonance frequencies to over 30 GHz. The present 25 GHz bandwidth is limited by device parasitics, with a predicted intrinsic device bandwidth of over 40 GHz.