A radiation hardened nonvolatile MNOS RAM (SA2998) is being developed at Sandia National Laboratories. The memory organization is 128 × 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The device requires +10 V and +25 V for operation. The devices have memory retention after a dose-rate exposure of lE12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.