Calibration of the photoluminescence technique for measuring B, P and Al concentrations in Si in the range 1012to 1015cm-3using Fourier transform spectroscopy
- 1 March 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (3), 157-166
- https://doi.org/10.1088/0268-1242/2/3/005
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Luminescence analysis of group III and V impurities in siliconJournal of Applied Spectroscopy, 1982
- (Invited) Recent Advances in Photoluminescence Analysis of Si: Application to an Epitaxial Layer and Nitrogen in SiJapanese Journal of Applied Physics, 1982
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of ImpuritiesJapanese Journal of Applied Physics, 1980
- Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence TechniqueJapanese Journal of Applied Physics, 1980
- Determination of boron and phosphorus concentration in silicon by photoluminescence analysisApplied Physics Letters, 1978
- Bound-exciton absorption in Si:Al, Si:Ga, and Si:InPhysical Review B, 1978
- Resolved fine structure of exciton complexes bound to phosphorus impurities in siliconSolid State Communications, 1977
- Relation between brightness, temperature, true temperature and colour temperature of tungsten. Luminance of tungstenPhysica, 1954
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954
- A new determination of the emissivity of tungsten ribbonPhysica, 1954