Advances in GaAs junction lasers with stripe geometry
- 31 December 1973
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 7, 310-337
- https://doi.org/10.1016/0022-2313(73)90073-2
Abstract
No abstract availableKeywords
This publication has 44 references indexed in Scilit:
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- Steady-State Junction-Current Distributions in Thin Resistive Films on Semiconductor Junctions (Solutions of ▿2v = ±ev)Journal of Applied Physics, 1970
- Catastrophic degradation in GaAs laser diodesSolid-State Electronics, 1970
- Laser-light noise and current noise of GaAs CW laser diodesIEEE Journal of Quantum Electronics, 1970
- Optimum Stripe Width for Continuous Operation of GaAs Junction LasersJournal of Applied Physics, 1969
- Laser diodes made from dislocation-free GaAs showing a homogeneous near-field patternIEEE Journal of Quantum Electronics, 1967
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966
- Spatial Distribution of Radiation from GaAs LasersJournal of Applied Physics, 1963
- STIMULATED EMISSION OF RADIATION FROM GaAs p-n JUNCTIONSApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962