Formations of D- Complexes and D- Band in Germanium
- 1 August 1978
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 45 (2), 545-552
- https://doi.org/10.1143/jpsj.45.545
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Far-Infrared Magnetoabsorptions of Free and Bound Excitons in Highly [111]-Stressed GermaniumJournal of the Physics Society Japan, 1978
- D- States in GermainumJournal of the Physics Society Japan, 1977
- Uniaxial Stress Effect on the Electron Affinity of theState in GermaniumPhysical Review Letters, 1976
- Photoconductivity from shallow negative donor ions in silicon: A new far-infrared detectorJournal of Applied Physics, 1976
- Very Shallow Trapping State in Doped GermaniumPhysical Review Letters, 1975
- Electron capture by neutral donors in n-type germanium and siliconPhysics Letters A, 1970
- Low-Temperature Recombination of Electrons and Donors in-Type Germanium and SiliconPhysical Review B, 1967
- Effect of Uniaxial Compression on Impurity Conduction in-Type GermaniumPhysical Review B, 1962
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- On the Continuous Absorption Coefficient of the Negative Hydrogen Ion. II.The Astrophysical Journal, 1945