Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding
- 1 February 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (2), 173-175
- https://doi.org/10.1109/68.484231
Abstract
1.3-/spl mu/m InGaAsP-InP lasers have been successfully fabricated on Si substrates by wafer bonding with heat treatment at 400/spl deg/C. A pressure of 4 kg/cm/sup 2/ has been applied on the wafers before the heat treatment and this pressure application has enabled us to achieve bonding strength required for the device fabrication even when the bonding temperature is as low as 400/spl deg/C. Room-temperature continuous-wave operation with threshold current of 49 mA has been achieved for 7-/spl mu/m-wide mesa lasers.Keywords
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