Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4), 101-105
- https://doi.org/10.1016/0022-0248(90)90346-m
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980
- A new GaAs, GaP, and GaAsxP1−x vacuum deposition technique using arsine and phosphine gasJournal of Vacuum Science and Technology, 1974