Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1B), L106-109
- https://doi.org/10.1143/jjap.30.l106
Abstract
Bi-Sr-Ca-Cu-O thin film with a zero-resistance critical temperature of 58 K has been grown by the molecular beam epitaxy technique in an ozone and oxygen mixture ambient under irradiation of ultraviolet light without postheat treatment. In situ reflection high-energy electron diffraction measurement during the layer-by-layer growth reveals that the reconstruction takes place just after completing the deposition of a single unit layer (a half-unit cell).Keywords
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