Solid Composition and Growth Rate of Ga1-xAlxAs Grown Epitaxially by MOCVD
- 1 September 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (9R), 1357-1360
- https://doi.org/10.1143/jjap.22.1357
Abstract
The effects of the growth temperature and the total hydrogen flow rate on the solid composition and the growth rate in the MOCVD growth of Ga1-x Al x As were investigated in detail. It was found that (1) the rate of incorporation of Ga atoms decreased with increasing growth temperature, while that of Al atoms increased up to 780°C and decreased beyond 780°C; (2) an increase in the total gas flow rate had the effect of reducing the boundary layer thickness and lowering the surface temperature of the wafer; and (3) there was no interaction between Ga and Al atoms in the growth of Ga1-x Al x As. The detailed experimental results are described in this paper.Keywords
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