Preparation and properties of ferroelectric PLZT thin films by rf sputtering

Abstract

Ferroelectric PLZT thin films were prepared onto Pt and fused‐quartz substrates by the rf sputtering method using powder targets with a few wt% of excess PbO. The structures of films were analyzed by x‐ray diffraction and classified into three types depending on substrate temperatures: the perovskite type (PLZT); the pyrochlore type, and the coexistence of both types. For the preparation of PLZT thin films, the substrate temperature was kept above 550 °C. Excess PbO seemed to act as a flux for crystal growth. The Curie temperature and hysteresis loops of thin films were investigated and it was confirmed that ferroelectric PLZT thin films could be obtained without annealing.