Role of the piezoelectric effect in device uniformity of GaAs integrated circuits
- 1 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3), 279-281
- https://doi.org/10.1063/1.95172
Abstract
In order to assess the orientation dependence of device uniformity in GaAs integrated circuits, metal-semiconductor field-effect transistors (MESFET’s) were fabricated along different crystal orientations on a 3-in. (100) substrate and compared with one another. Measurements indicated that the characteristics of FET’s oriented along [011] and [011̄] directions have strong dependence upon their radial positions on the wafer. However, FET’s oriented in [001] and [010] directions do not display such dependence and have better device uniformity. The orientation effect on the radial dependence of the FET device characteristics can be attributed to the piezoelectric effect.Keywords
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