Electrochemical fabrication of ordered Bi2S3nanowire arrays
- 6 November 2001
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 34 (22), 3224-3228
- https://doi.org/10.1088/0022-3727/34/22/304
Abstract
We have successfully fabricated ordered, well-crystallized Bi2S3 nanowire arrays embedded in the nanochannels of porous anodic aluminium oxide templates by direct current electrodeposition from a dimethylsulfoxide solution containing BiCl3 and elemental sulfur. X-ray diffraction and selected area electron diffraction investigations demonstrate that the Bi2S3 nanowires have an orthorhombic uniform structure. Electromicroscopy results show that the nanowires are quite ordered with diameters of about 40 nm and lengths up to 5 µm. X-ray energy dispersion analysis indicates that the atomic composition of Bi and S is very close to a 2 : 3 stoichiometry. The optical properties of these nanowires were characterized by optical absorption techniques. These studies reveal that the annealed Bi2S3 nanowires have an optical band edge (direct) of about 1.56 eV.Keywords
This publication has 26 references indexed in Scilit:
- Synthesis and Characterization of Helical Multi-Shell Gold NanowiresScience, 2000
- Electrochemical Preparation of CdSe Nanowire ArraysThe Journal of Physical Chemistry B, 2000
- Uniform Nickel Deposition into Ordered Alumina Pores by Pulsed ElectrodepositionAdvanced Materials, 2000
- General Synthesis of Compound Semiconductor NanowiresAdvanced Materials, 2000
- Preparation of II-VI group semiconductor nanowire arrays by dc electrochemical deposition in porous aluminum oxide templatesPublished by Walter de Gruyter GmbH ,2000
- Metallic nanowires created by biopolymer maskingApplied Physics Letters, 1999
- Nonlithographic nano-wire arrays: fabrication, physics, and device applicationsIEEE Transactions on Electron Devices, 1996
- Perpendicular giant magnetoresistance of multilayered Co/Cu nanowiresPhysical Review B, 1995
- Growth and microhardness studies of chalcogneides of arsenic, antimony and bismuthJournal of Materials Science Letters, 1988
- Electrical and optical properties of some M2v−bN3vi−b semiconductorsJournal of Physics and Chemistry of Solids, 1957