Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth
- 1 May 1979
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 19 (1), 63-70
- https://doi.org/10.1007/bf00900540
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Detection of faceting on (hk0) surfaces of thin gold films by diffraction in the electron microscope at 100 kVSurface Science, 1978
- Temperature range for growth of autoepitaxial GaAs films by MBEJournal of Crystal Growth, 1978
- Cleaning of gap surface by forming oxide filmSurface Science, 1978
- Adsorption-desorption studies of Zn on GaAsSurface Science, 1977
- Chemical preparation of GaAs surfaces and their characterization by Auger electron and x-ray photoemission spectroscopiesJournal of Heterocyclic Chemistry, 1977
- Appareillage et méthodologie d'étude des surfaces de GaAs en cours de croissance en épitaxie phase vapeurRevue de Physique Appliquée, 1976
- Electron stimulated oxidation of GaAs, studied by quantitative auger electron spectroscopySurface Science, 1975
- Electron spectroscopy of GaAs and AlAs surfacesSurface Science, 1975
- Analytical Auger Electron SpectroscopyPublished by Springer Nature ,1974
- Use of Auger Electron Spectroscopy in Determining the Effect of Carbon and Other Surface Contaminants on GaAs–Cs–O PhotocathodesJournal of Applied Physics, 1970