Auger spectroscopic observation of Si–Au mixed-phase formation at low temperatures

Abstract

When a Si crystal substrate is covered with evaporated Au and heated at relatively low temperatures (100–300 °C) in an oxidizing atmosphere, because of the Si–Au reaction at the interface, a SiO₂ layer is readily formed over the Au layer. Present Auger spectroscopic study concludes that the reaction induces a Si–Au mixed phase that is almost identical with the Si–Au alloyed phase obtained by heat treatment in a high vacuum at temperatures well above the Si–Au eutectic point (370 °C). The Auger spectra of Si in both the mixed and alloyed phases differ obviously from that of the pure Si crystal.