Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine
- 30 January 1993
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 16 (1-3), 178-181
- https://doi.org/10.1016/0921-5107(93)90038-o
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Blue-green laser diodesApplied Physics Letters, 1991
- HgCdTe double heterostructure injection laser grown by molecular beam epitaxyApplied Physics Letters, 1991
- Shallow donors in CdTePhysical Review B, 1990
- Photoassisted molecular beam epitaxy of wide gap II–VI heterostructuresJournal of Crystal Growth, 1990
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Properties of doped II–VI films and superlattices grown by photoassisted molecular beam epitaxyJournal of Crystal Growth, 1988
- Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxyJournal of Crystal Growth, 1985
- Cadmium Telluride Nuclear Radiation DetectorsIEEE Transactions on Nuclear Science, 1975