Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodes
- 1 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3), 1131-1134
- https://doi.org/10.1063/1.337356
Abstract
We have examined the properties of (InGa)As/GaAs strained-layer superlattices (SLSs) that have been disordered by implantation of 5×1015/cm2, 250 keV 64Zn+ followed by controlled atmosphere annealing at 680 °C for 30 min. Ion channeling techniques indicate that the Zn-disordered regions of the SLS contain extensive crystalline damage after annealing. Simulations of the disordering process using an analytic ion range code predict that the electrical junction resulting from the implantation process is located outside the disordered region of the SLS in both the vertical and the lateral directions. Junction electroluminescence intensity for given drive current densities from the Zn-disordered SLS devices is comparable to that from reference Be-implantation-doped (SLS retained) devices and greatly exceeds that from heavily dislocated grown-junction mesa diodes in the homogeneous alloy of the average SLS composition; this result is consistent with the results of the simulations. This study demonstrates that implantation disordering can be as useful for strained-layer systems as for less severely mismatched heterojunction systems.Keywords
This publication has 15 references indexed in Scilit:
- Ion-implantation doping of strained-layer superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Ion implantation into strained-layer superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Summary Abstract: High quality p–n junctions in InGaAs/GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1984
- The effect of aluminum composition on silicon donor behavior in AlxGa1−xAsJournal of Vacuum Science & Technology B, 1984
- An Evaluation of Implantation-Disordering of (Inga)As/Gaas Strained-Layer SuperlatticesMRS Proceedings, 1984
- The preparation and characterization of strained-layer superlattices in the GaAs + GaP SystemJournal of Electronic Materials, 1983
- Low-energy antimony implantation in siliconRadiation Effects, 1980
- Considerations of ion channeling for semiconductor microstructure fabricationJournal of Vacuum Science and Technology, 1979
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972