Photoluminescence identification of ∼77-meV deep acceptor in GaAs
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1263-1265
- https://doi.org/10.1063/1.330584
Abstract
A study of the photoluminescence emission band at ∼1.44 eV present in GaAs has been made at temperatures between 2–300 K. Changes in photoluminescence excitation intensity, emission energy, and emission intensity as a function of temperature lead to the identification of a 77±2-meV deep acceptor. The temperature dependence of the emission-peak energy follows Eagles’ model for the free electron-neutral acceptor transition. The origin of the acceptor is discussed on the basis of the presence of a high concentration of arsenic vacancies.Keywords
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