Elastic moduli of gallium nitride
- 3 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (9), 1122-1124
- https://doi.org/10.1063/1.118503
Abstract
The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN.Keywords
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