Preparation of GaN Single Crystals Using a Na Flux
- 1 February 1997
- journal article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 9 (2), 413-416
- https://doi.org/10.1021/cm960494s
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Preparation and crystal structure of a new barium silicon nitride, Ba5Si2N6Journal of Alloys and Compounds, 1996
- Growth of Group III Nitrides. A Review of Precursors and TechniquesChemistry of Materials, 1996
- Synthesis and crystal structure of Sr2ZnN2 and Ba2ZnN2Journal of Solid State Chemistry, 1995
- III–V Nitrides—thermodynamics and crystal growth at high N2 pressureJournal of Physics and Chemistry of Solids, 1995
- High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting DiodesScience, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Crystal growth of GaN by the reaction between gallium and ammoniaJournal of Crystal Growth, 1984
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- Crystal Growth and Characterization of Gallium NitrideJournal of the Electrochemical Society, 1974
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969