Impurity redistribution in GaAs metalorganic vapor phase epilayers
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7), 638-640
- https://doi.org/10.1063/1.93633
Abstract
This letter reports new experimental results using the secondary ion mass spectrometry technique for quantitative determination of Mg, Cr, Mn, Fe in gallium arsenide layers grown on semi-insulating substrates by means of metalorganic vapor phase epitaxy. Mg amd Fe accumulation at the interface and variable residual impurity levels were found in these layers.Keywords
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