Preparation of -oriented Lead-Zirconate-Titanate Films by Sol-Gel Technique
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S), 4147-4149
- https://doi.org/10.1143/jjap.32.4147
Abstract
A sol-gel technique to control the crystalline orientation of lead-zirconate-titanate (PZT) films on Pt/Ti/SiO2/Si substrates has been studied. It is found that crystalline orientations of sintered films show strong dependence on their thicknesses and -oriented films can be obtained by limiting their thicknesses to 100 nm. It is also found that thicker oriented films can be obtained by stacking up these oriented films. The scanning electron microscopy observation reveals that a well-oriented film surface is smoother than those of non oriented ones. The leakage current of the 240-nm-thick oriented film is about 7 nA/cm2 at 3 V, which is an order of magnitude lower than the best reported lanthanum and iron-doped PZT film.Keywords
This publication has 5 references indexed in Scilit:
- Electrical characteristics of ferroelectric PZT thin films for DRAM applicationsIEEE Transactions on Electron Devices, 1992
- Preparation and Properties of PZT Thin Films by Metal Alkoxides-DEA MethodJournal of the Ceramic Society of Japan, 1990
- Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta/sub 2/O/sub 5/ filmIEEE Electron Device Letters, 1989
- Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memoriesIEEE Transactions on Electron Devices, 1989
- Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memoryIEEE Transactions on Electron Devices, 1982