Flash annealing of copper and krypton ion implants in cadmium telluride

Abstract

Copper and krypton ions have been implanted into Bridgman-grown CdTe crystals. Radiation from tungsten lamps was used to flash anneal the implant damage. Low-temperature photoluminescence analysis of the annealed samples indicates that the annealing provided almost complete repair of the implant damage. However, Cu implants did not significantly increase the activation of this impurity in the lattice when compared with an unimplanted, annealed standard. A comparison of the luminescence spectral changes following annealing at various temperatures of both implanted and unimplanted samples was made. This comparison indicated that activation of Cd site substitutional impurities in the lattice may be limited by the concentration of Cd vacancies generated by the annealing.