Ordered vacancy compound CuIn3Se5 on GaAs (100): Epitaxial growth and characterization
- 27 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (26), 3600-3601
- https://doi.org/10.1063/1.111211
Abstract
Epitaxial growth of the ordered vacancy compound CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy from Cu2Se and In2Se3 sources. Electron probe microanalysis and x‐ray diffraction have confirmed the composition for the 1‐3‐5 phase and that the films are single‐crystal CuIn3Se5 (100). Transmission electron microscopy characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence measurements performed at 7.5 K indicate that the band gap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice.Keywords
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