Characterization of LP-MOCVD Grown (Al, Ga)As/GaAs Heterostructures by Photoluminescence: Single Heterojunction and Inadvertent Quantum Wells
- 1 December 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (12A), L925
- https://doi.org/10.1143/jjap.23.l925
Abstract
Photoluminescence (PL) was used to detect rapid alloy compositional fluctuations which were found in (Al, Ga)As/GaAs heterostructures grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). PL data are employed to estimate the thickness and aluminum composition of the resulting inadvertent quantum well. A way to eliminate these artifacts was found. Using the improved growth procedures, modulation-doped heterostructures showing two-dimensional electron-gas behavior were then achieved.Keywords
This publication has 4 references indexed in Scilit:
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Spectrum studies on a GaAs-AlGaAs multi-quantum-well laser diode grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980