Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

Abstract

Undoped ${\mathrm{In}}_{\text{0.53}}{\mathrm{Ga}}_{\text{0.47}}\mathrm{As}$ epilayers were implanted with 2-MeV ${\mathrm{Fe}}^{+}$ ions at doses of ${\text{1×10}}^{15}$ and ${\text{1×10}}^{16}\hspace{0.5em}{\mathrm{cm}}^{\text{−2}}$ at room temperature and annealed at temperatures between 500 and 800 °C. Hall-effect measurements show that after annealing, layers with resistivities on the order of ${10}^5$ Ω/square can be achieved. Carrier lifetimes as short as 300 fs are observed for samples annealed at 500 and 600 °C. For higher annealing temperatures, characteristic times of the optical response are on the order of a few picoseconds.