Thermal Desorption Studies of Silicon Dioxide Deposited by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

Abstract

The relationship between the structural properties of and deposition conditions is studied with thermal desorption spectroscopy. The principal thermally desorbed species, except for , are divided into two categories: species and ethoxyl‐group‐related species. Most part of the species, such as , OH, O and , are generated from silanol groups rather than actual water in the oxide. In contrast with O‐atom desorption, desorption is not synchronized with desorption. It is likely that desorbed has its origin in ozone included in the source gas. The ethoxyl‐group‐related species, including , , , and , arise from components that have been incorporated into the oxide atomic network due to the incompleteness of TEOS decomposition. The dependence of thermal desorption spectra on source‐gas composition and deposition temperature is described.