Symmetry of the 4.5-eV Optical Interband Threshold in GaAs
- 21 February 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (8), 494-497
- https://doi.org/10.1103/PhysRevLett.28.494
Abstract
We report on the polarization dependence of the transverse electroreflectance spectrum of the 4.5-eV () structure in GaAs. An interpretation using Bottka-Fischer symmetry analysis shows that this transition has symmetry, in contrast to the corresponding transition in Ge.
Keywords
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