Fractional quantum Hall effect at filling factors up to ν=3

Abstract

Addition gaps in the energy spectrum of a two-dimensional electron gas in a strong magnetic field due to electron-electron interaction seem to be responsible for the fractional quantum Hall effect (FQHE). The authors have analysed the structures attributed to the FQHE in the components rho _xx, rho _xy and sigma _xx of the resistivity and conductivity tensor as a function of the magnetic field at Landau filling factors up to nu =3. For the first time the values for the energy gaps at nu =⁴/₃ and nu =⁵/₃ are determined and resistivity values for the corresponding Hall plateaux are reported.