Studies of photoconductance decay method for characterization of near-surface electrical properties of semiconductors
- 1 September 2011
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 519 (22), 7621-7626
- https://doi.org/10.1016/j.tsf.2011.04.212
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatmentApplied Surface Science, 2008
- Nonequilibrium carrier dynamics in heavily p-doped GaAsThe European Physical Journal Applied Physics, 2004
- Hot Water Etching of Silicon Surfaces: New Insights of Mechanistic understanding and Implications to Device FabricationMRS Proceedings, 1997
- In Situ Vapor Phase Pregate Oxide Cleaning and Its Effects on Metal‐Oxide‐Semiconductor Device CharacteristicsJournal of the Electrochemical Society, 1995
- Anisotropic etching of germaniumSensors and Actuators A: Physical, 1995
- Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Preoxidation UV Treatment of Silicon WafersJournal of the Electrochemical Society, 1987
- Oxygen pressure as a parameter in the D.C. plasma anodization of siliconThin Solid Films, 1980
- Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratingsApplied Physics Letters, 1978
- Contactless measurement of semiconductor conductivity by radio frequency-free-carrier power absorptionReview of Scientific Instruments, 1976