Electrons at a semiconductor heterojunction subject to a periodic biasing potential
- 20 October 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (29), L781-L786
- https://doi.org/10.1088/0022-3719/17/29/005
Abstract
The author presents initial results for the one-electron theory of electron states at a semiconductor heterojunction under the influence of a periodic potential supplied by an interdigitated finger gate structure. The effects of magnetic field and the likely many-body corrections or instabilities are outlined.Keywords
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- Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructuresSurface Science, 1983
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