Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (5), 305-306
- https://doi.org/10.1109/68.54687
Abstract
Structure and lasing characteristics of double-quantum-wire lasers are reported. Threshold current as low as 2.4 mA and continuous wave operation at room temperature were achieved for lasers with uncoated facets. Subbands due to lateral quantum confinement were observed in the laser spectra. Good agreement between measured dependence of threshold current on cavity length and a simple model accounting for gain saturation was found.<>Keywords
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