Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices
- 1 July 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (4), 2504-2510
- https://doi.org/10.1116/1.587792