Carrier Trapping in Photoconducting Anthracene

Abstract

The techniques of transient space charge limited photocurrent have been employed to observe hole trapping in monocrystalline anthracene. Two trapping processes are clearly evident. One corresponding to fast traping with time about 10²μsec and a relatively slow process with time about 10⁴μsec. The fast process is shown to be associated with traps whose density is reducible by simple crystal annealing. Evidence is presented which suggest these traps to be molecules in distorted positions in the crystal lattice.