Time-delayed laser oscillation of a DH diode having an unpumped region
- 1 April 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4), 1742-1744
- https://doi.org/10.1063/1.323820
Abstract
An AlxGa1−xAs‐AlyGa1−yAs double‐heterostructure (DH) superluminescent diode (SLD) having an unpumped absorbing region has shown laser oscillation with a long time delay, amounting to as much as microseconds at a low pumping level. It has been confirmed that this lasing is made possible by two types of band‐gap shrinkage, one resulting from the many‐body interaction of excited carriers and the other from the temperature rise in the excited region.Keywords
This publication has 10 references indexed in Scilit:
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976
- Room Temperature cw Operated Superluminescent Diodes for Optical Pumping of Nd: YAG LaserJapanese Journal of Applied Physics, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Temperature dependence of the band gap and comparison with the threshold frequency of pure GaAs lasersJournal of Applied Physics, 1975
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Delays andQswitching in semiconductor lasers - Still an open questionIEEE Journal of Quantum Electronics, 1974
- A stripe-geometry double-heterostructure amplified-spontaneous-emission (superluminescent) diodeIEEE Journal of Quantum Electronics, 1973
- Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K)Journal of Applied Physics, 1970
- Theory of the Band Structure of Very Degenerate SemiconductorsPhysical Review B, 1962