Equivalent circuit model of FET including distributed gate effects
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6), 1193-1195
- https://doi.org/10.1109/t-ed.1980.20006
Abstract
A model is presented which takes into account the distributed nature of the gate in microwave field-effect transistors (FET's). The model is used to derive an expression for the equivalent gate impedance. The result is suitable for determining the reduction in the available gain tlue to gate losses.Keywords
This publication has 2 references indexed in Scilit:
- Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.Electronics Letters, 1978
- GaAs microwave power FETIEEE Transactions on Electron Devices, 1976