V-grooved substrate buried heterostructure InGaAsP/InP laser

Abstract
A V-grooved substrate buried-heterostructure laser emitting at 1.3 μm wavelength is described. The active layer is buried in the V-shaped groove. A CW threshold current of 10~20 mA is obtained and a far-field pattern free from irregularity and peak shift is realised. Damped relaxation oscillation and stable aging characteristics are obtained.